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                                                                                    STP53N08
                                                 N - CHANNEL ENHANCEMENT MODE
                                                         POWER MOS TRANSISTOR
                                                                                       PRELIMINARY DATA
        TYPE              V DSS         R DS(on)        ID
STP53N08                  80 V        < 0.024          53 A

s   TYPICAL RDS(on) = 0.018 
s   AVALANCE RUGGED TECHNOLOGY
s   100% AVALANCHE TESTED
s   REPETITIVE AVALANCHE DATA AT 100oC
s   LOW GATE CHARGE
s    HIGH CURRENT CAPABILITY
                                                                                               3
s   175 oC OPERATING TEMPERATURE                                                           2
                                                                                       1
s   APPLICATION ORIENTED
    CHARACTERIZATION
                                                                              TO-220

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS
                                                                  INTERNAL SCHEMATIC DIAGRAM
s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

  ABS, AIR-BAG, LAMPDRIVERS, Etc.)




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                            Value                  Unit
     V DS      Drain-source Voltage (V GS = 0)                               80                      V
     VDGR      Drain- gate Voltage (R GS = 20 k)                             80                      V
     V GS      Gate-source Voltage                                          

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