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N-channel 1200 V, 2.7 4.7 A TO-220
,
Zener-protected SuperMESHTM Power MOSFET
Features
Type VDSS RDS(on) ID PW
STP5N120 1200 V < 3.5 4.7 A 160 W
100% avalanche tested
Extremely high dv/dt capability 3
2
ESD improved capability 1
New high voltage benchmark TO-220
Gate charge minimized
Application
Switching applications
Figure 1. Internal schematic diagram
Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1. Device summary
Order code Marking Package Packaging
STP5N120 5N120 TO-220 Tube
November 2009 Doc ID 13530 Rev 2 1/12
www.st.com 12
Contents STP5N120
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 13530 Rev 2
STP5N120 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 1200 V
VGS Gate-source voltage
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