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STP5NB90FP
N - CHANNEL 900V - 2.3 - 5A - TO-220/TO-220FP
PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
ST P5NB90 900 V < 2.5 5 A
ST P5NB90FP 900 V < 2.5 5 A
s TYPICAL RDS(on) = 2.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
3 3
2 2
DESCRIPTION 1 1
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an
TO-220 TO-220FP
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Un it
STP5NB90 STP5NB90F P
V DS Drain-source Voltage (V GS = 0) 900 V
V DGR Drain- gate Voltage (R GS = 20 k) 900 V
V GS G ate-source Voltage
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