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                                                                                   STP60NE06-16
                                                                                 STP60NE06-16FP
                               N - CHANNEL ENHANCEMENT MODE
                       " SINGLE FEATURE SIZETM " POWER MOSFET
        TYPE               V DSS        R DS(on)        ID
STP60NE06-16               60 V       < 0.016          60 A
STP60NE06-16FP             60 V       < 0.016          35 A

s   TYPICAL RDS(on) = 0.013 
s   EXCEPTIONAL dV/dt CAPABILTY
s   100% AVALANCHE TESTED
s   LOW GATE CHARGE 100 oC
s   HIGH dV/dt CAPABILITY
                                                                                                 3                                    3
s   APPLICATION ORIENTED                                                                     2                                   2
    CHARACTERIZATION                                                                     1                                   1


DESCRIPTION                                                                    TO-220                      TO220FP
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and                         INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION



ABSOLUTE MAXIMUM RATINGS
    Symbol                              Parameter                                            Value                               Unit
                                                                          STP60NE06-16               STP60NE06-16FP
     V DS     Drain-source Voltage (V GS = 0)                                                    60                                  V
     V DGR    Drain- gate Voltage (R GS = 20 k)                                                  60                                  V
     V GS     Gate-source Voltage                                                                

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