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                                                                                                  STP6NB80
                                                                                                STP6NB80FP
                          N-CHANNEL 800V - 1.6 - 5.7A TO-220/TO-220FP
                                                 PowerMeshTM MOSFET

         TYPE               VDSS         RDS(on)            ID

    STP6NB80               800 V         < 1.9          5.7 A
    STP6NB80FP             800 V         < 1.9          5.7 A
s    TYPICAL RDS(on) = 1.6 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED                                                                         3                               3
s    VERY LOW INTRINSIC CAPACITANCES                                                           2                               2
                                                                                           1                               1

DESCRIPTION                                                                 TO-220                              TO-220FP
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area,                   INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s DC-DC & DC-AC CONVERTERS FOR

  WELDING EQUIPMENT AND
  UNINTERRUPTIBLE POWER SUPPLIES AND
  MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                          Value                       Unit
                                                                                 STP6NB80                    STP6NB80FP
       VDS        Drain-source Voltage (VGS = 0)                                                       800                      V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                                      800                      V
       VGS        Gate- source Voltage                                                                 

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