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                                                                                                    STP6NS25
                                                       N-CHANNEL 250V - 0.9 - 6A TO-220
                                                             MESH OVERLAYTM MOSFET

        TYPE                VDSS         RDS(on)            ID

 STP6NS25                  250 V         < 1.1          6A
s   TYPICAL RDS(on) = 0.9 
s   EXTREMELY HIGH dv/dt CAPABILITY
s   100% AVALANCHE TESTED
                                                                                                             3
                                                                                                         2
                                                                                                     1

DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-                                             TO-220
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for                      INTERNAL SCHEMATIC DIAGRAM
lighting applications.



APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

  INDUSTRIAL, AND LIGHTING EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
    Symbol                                      Parameter                                    Value                  Unit
      VDS         Drain-source Voltage (VGS = 0)                                              250                    V
     VDGR         Drain-gate Voltage (RGS = 20 k)                                             250                    V
      VGS         Gate- source Voltage                                                        

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