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                                                                            STP80N03L-06
                        N - CHANNEL ENHANCEMENT MODE
            "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
                                                                                             TENTATIVE DATA
         TYPE             V DSS         R DS(on)       ID
STP80N03L-06              30 V        < 0.006       80 A (*)

s    TYPICAL RDS(on) = 0.005 
s    AVALANCHE RUGGED TECHNOLOGY
s    100% AVALANCHE TESTED
s    REPETITIVE AVALANCHE DATA AT 100oC
s    HIGH CURRENT CAPABILITY
s    175oC OPERATING TEMPERATURE                                                                 3
s    HIGH dV/dt RUGGEDNESS                                                                   2
                                                                                         1
s    APPLICATION ORIENTED
     CHARACTERIZATION
                                                                                TO-220
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

s SYNCRONOUS RECTIFICATION

                                                                    INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                              Value                   Unit
      V DS      Drain-source Voltage (V GS = 0)                                30                       V
     VDGR       Drain- gate Voltage (R GS = 20 k)                              30                       V
      V GS      Gate-source Voltage                                           

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