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stp80n05-09


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                                                                                               STP80N05-09
                        N - CHANNEL ENHANCEMENT MODE
            "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
        TYPE              VDS S         RDS(o n)     ID
STP80N05-09               50 V        < 0.009       80 A

s    ULTRA HIGH DENSITY TECHNOLOGY
s    TYPICAL RDS(on) = 7 m
s    AVALANCHE RUGGED TECHNOLOGY
s    LOW GATE CHARGE
s    HIGH CURRENT CAPABILITY
        o
s    175 C OPERATING TEMPERATURE                                                                                   3
                                                                                                               2
                                                                                                           1

APPLICATIONS
s SYNCROUNOUS RECTIFIERS
                                                                                                TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING

s DC-DC & DC-AC CONVERTER ABSOLUTE

  MAXIMUM RATINGS


                                                                          INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symbol                             Parameter                                              Value                            Unit
      VDS       Drain-source Voltage (VGS = 0)                                                  50                              V
     VDGR       Drain- gate Vol tage (R GS = 20 k)                                              50                              V
      V GS      Gate-s ource Voltage                                                          



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