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N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STP80N06-10 60 V < 0.010 80 A
s TYPICAL RDS(on) = 8.5 m
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCE TESTED
s HIGH CURRENT CAPABILITY
s 175 oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS 3
s APPLICATION ORIENTED 2
1
CHARACTERIZATION
APPLICATIONS TO-220
s HIGH CURRENT, HIGH SPEED SWITCHING
s PWM MOTOR CONTROL
s DC-DC & DC-AC CONVERTER
s SYNCROUNOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 60 V
VDGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage
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