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>> Download stp8nc70z documenatation <<Text preview - extract from the document STP8NC70Z - STP8NC70ZFP
STB8NC70Z - STB8NC70Z-1
N-CHANNEL 700V - 0.90 - 6.8A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STP8NC70Z/FP 700V < 1.2 6.8 A
STB8NC70Z/-1 700V < 1.2 6.8 A 3
1
s TYPICAL RDS(on) = 0.9
s EXTREMELY HIGH dv/dt AND CAPABILITY D2PAK 2
3
1
GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
3
12
DESCRIPTION I2PAK
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)8NC70Z(-1) STP8NC70ZFP
VDS Drain-source Voltage (VGS = 0) 700 V
VDGR Drain-gate Voltage (RGS = 20 k) 700 V
VGS Gate- source Voltage
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