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                                                                        STQ1NC60R
                                           N-CHANNEL 600V - 12 - 0.3A TO-92
                                               PowerMESHTMII Power MOSFET

        TYPE           VDSS      RDS(on)      ID

STQ1NC60R             600 V      < 15       0.3 A
s   TYPICAL RDS(on) = 12 
s   EXTREMELY HIGH dv/dt CAPABILITY
s   100% AVALANCHE TESTED
s   NEW HIGH VOLTAGE BENCHMARK
s   GATE CHARGE MINIMIZED

                                                                TO-92        TO-92
                                                                BULK      (AMMOPACK)
DESCRIPTION
Using the latest high voltage MESH OVERLAYTMII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and          INTERNAL SCHEMATIC DIAGRAM
unrivalled gate charge and switching characteris-
tics.



APPLICATIONS
s LOW SWITCH MODE POWER SUPPLIES
  (SMPS)
s BATTERY CHARGER




ORDERING INFORMATION
       SALES TYPE              MARKING                 PACKAGE            PACKAGING
       STQ1NC60R               Q1NC60R                  TO-92               BULK
      STQ1NC60R-AP             Q1NC60R                  TO-92             AMMOPACK




July 2003                                                                              1/9
STQ1NC60R

ABSOLUTE MAXIMUM RATINGS
      Symbol                            Parameter                                       Value                 Unit
        VDS       Drain-source Voltage (VGS = 0)                                          600                  V
       VDGR       Drain-gate Voltage (RGS = 20 k)                                         600                  V
        VGS       Gate- source Voltage                                                   

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