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                                                                                           STQ1NE10L
                                                     N-CHANNEL 100V - 0.3  - 1A TO-92
                                                          STripFETTM POWER MOSFET

         TYPE              VDSS         RDS(on)      ID

    STQ1NE10L              100 V         <0.4        1A
s    TYPICAL RDS(on) = 0.3 
s    EXCEPTIONAL HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    AVALANCHE RUGGED TECHNOLOGY
s    LOW THRESHOLD DRIVE

DESCRIPTION
This Power MOSFET is the latest development of                            TO-92                      TO-92
STMicroelectronis unique "Single Feature SizeTM"
                                                                                                  (Ammopack)
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.                            INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES, etc.)

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                                    Value                          Unit
      VDS           Drain-source Voltage (VGS = 0)                                100                                 V
      VDGR          Drain-gate Voltage (RGS = 20 k)                               100                                 V
       VGS          Gate- source Voltage                                          

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