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                                                                                                STS3C3F30L
                                                                N-CHANNEL 30V - 0.050  - 3.5A SO-8
                                                                 P-CHANNEL 30V - 0.140  - 3A SO-8
                                                                     STripFETTM II POWER MOSFET

               TYPE                VDSS       RDS(on)    ID

    STS3C3F30L(N-Channel)          30 V     < 65 m      3.5 A
    STS3C3F30L(P-Channel)          30 V     < 165 m      3A
s    TYPICAL RDS(on) (N-Channel) = 50 m
s    TYPICAL RDS(on) (P-Channel) = 140 m
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
s    LOW THRESHOLD DRIVE

DESCRIPTION                                                                                      SO-8
This application specific Power MOSFET is the second
generation of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing re-           INTERNAL SCHEMATIC DIAGRAM
producibility.

APPLICATIONS
s DC/DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

  PHONES




ABSOLUTE MAXIMUM RATINGS
     Symbol                               Parameter                       N-CHANNEL               P-CHANNEL            Unit
      VDS         Drain-source Voltage (VGS = 0)                                           30                            V
       VDGR       Drain-gate Voltage (RGS = 20 k)                                          30                            V
       VGS        Gate- source Voltage                                                    

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