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                                                                           STS05DTP03

                                   Dual NPN-PNP complementary bipolar transistor


Features
   High gain
   Low VCE(sat)                                                             5
                                                                       8
   Simplified circuit design
   Reduced component count
                                                                                   4
                                                                             1
Applications
   Push-pull or Totem-Pole configuration                                   SO-8
   MOSFET and IGBT gate driving
   Motor, relay and solenoid driving
                                                       Figure 1.   Internal schematic diagram
Description
The STS05DTP03 is a hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar technology. The STS05DTP03 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.




Table 1.       Device summary
       Order code                  Marking                   Package               Packaging

      STS05DTP03                  S05DTP03                     SO-8               Tape and reel




March 2009                                         Rev 1                                          1/10
                                                                                            www.st.com   10
Electrical ratings                                                                             STS05DTP03

1                    Electrical ratings


Table 2.             Absolute maximum ratings
  Symbol                                         Parameter                          Value           Unit

                                                                             NPN            PNP

    VCBO            Collector-base voltage (IE = 0)                          45             -45       V
    VCEO            Collector-emitter voltage (IB = 0)                       30             -30       V
    VEBO            Emitter-base voltage (IC = 0)                             6                -6     V
       IC           Collector current                                         5                -5     A
       ICM          Collector peak current (tP < 5 ms)                       10             -10       A
        IB          Base current                                              1                -1     A
       IBM          Base peak current (tP < 1 ms)                             2                -2     A
    PTOT            Total dissipation at Tamb = 25 

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