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STS11N3LLH5
N-channel 30 V, 0.012 , 11 A, SO-8
STripFETTM V Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STS11N3LLH5 30 V < 0.014 11 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) SO-8
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications Figure 1. Internal schematic diagram
Description
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit.
Table 1. Device summary
Order code Marking Package Packaging
STS11N3LLH5 11D3L SO-8 Tape and reel
July 2009 Doc ID 15982 Rev 1 1/12
www.st.com 12
Contents STS11N3LLH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 15982 Rev 1
STS11N3LLH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo