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STS11NF30L
N-channel 30V - 0.0085 - 11A SO-8
Low gate charge STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STS11NF30L 30V <0.009 11A
Optimal RDS(on) x Qg trade-off
Conduction losses reduced
Description S0-8
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
Internal schematic diagram
remarkable manufacturing reproducibility.
Applications
Switching application
Order codes
Part number Marking Package Packaging
STS11NF30L 11F30L- SO-8 Tape & reel
January 2007 Rev 11 1/12
www.st.com 12
Contents STS11NF30L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS11NF30L Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo