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                                                                                            STS11NF3LL
                              N-CHANNEL 30V - 0.008 - 11A SO-8
                  LOW GATE CHARGE STripFETTM II POWER MOSFET

         TYPE              VDSS           RDS(on)        ID

    STS11NF3LL             30 V         < 0.011         11 A
s    TYPICAL RDS(on) = 0.011 @ 4.5V
s    OPTIMAL RDS(on) Qg TRADE-OFF @4.5V
s    CONDUCTION LOSSES REDUCED
s    SWITCHING LOSSES REDUCED


                                                                                            SO-8
DESCRIPTION
This application specific Power MOSFET is
the third genaration of STMicroelectronics
unique " Single Feature Size" strip-based pro-
cess. The resulting transistor shows the best                            INTERNAL SCHEMATIC DIAGRAM
trade-off between on-resistance and gate
charge. When used as high and low side in
buck regulators, it gives the best performance
in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficien-
cy are of paramount importance.


APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED

  FOR HIGH EFFICIENCY CPU CORE DC/DC
  CONVERTERS FOR MOBILE PCs




ABSOLUTE MAXIMUM RATINGS
     Symbol                                 Parameter                                        Value   Unit
       VDS        Drain-source Voltage (VGS = 0)                                               30     V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                              30     V
       VGS        Gate- source Voltage                                                        

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