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STS15N4LLF3
N-channel 40V - 0.0042 - 15A - SO-8
STripFETTM Power MOSFET
General features
Type VDSS RDS(on) ID
STS15N4LLF3 40V <0.005 15A
Optimal RDS(on)x Qg trade-off @ 4.5V
Conduction losses reduced
Switching losses reduced
SO-8
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique "Single Feature SizeTM"
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows Internal schematic diagram
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Applications
Switching application
Order codes
Part number Marking Package Packaging
STS15N4LLF3 15N4LL- SO-8 Tape & reel
November 2006 Rev 2 1/12
www.st.com 12
Contents STS15N4LLF3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS15N4LLF3 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximim ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 40 V
VGS Gate-source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo