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sts1nc60


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                                                                                                     STS1NC60
                                                      N-CHANNEL 600V - 12 - 0.3A - SO-8
                                                               PowerMESHTMII MOSFET

         TYPE               VDSS         RDS(on)            ID

    STS1NC60               600 V         < 15           0.3 A
s    TYPICAL RDS(on) = 12
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    NEW HIGH VOLTAGE BENCHMARK
s    GATE CHARGE MINIMIZED

DESCRIPTION                                                                                  SO-8
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.                                                  INTERNAL SCHEMATIC DIAGRAM



APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
s SWITH MODE POWER SUPPLIES (SMPS)




ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                    Value                        Unit
       VDS        Drain-source Voltage (VGS = 0)                                              600                          V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                             600                          V
       VGS        Gate- source Voltage                                                        



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