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                                                                                              STS1HNC60
                                                             N-CHANNEL 600V - 7 - 0.4A SO-8
                                                                    PowerMeshTMII MOSFET
                                                                                                       PRELIMINARY DATA

         TYPE               VDSS         RDS(on)            ID

    STS1HNC60              600 V          <8           0.36 A
s    TYPICAL RDS(on) = 7 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    NEW HIGH VOLTAGE BENCHMARK
s    GATE CHARGE MINIMIZED
                                                                                            SO-8
DESCRIPTION
Using the latest high voltage MESH OVERLAYTMII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout                       INTERNAL SCHEMATIC DIAGRAM
coupled with the Company's proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.



APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES

  (SMPS)
s CFL




ABSOLUTE MAXIMUM RATINGS
     Symbol                                     Parameter                                    Value                      Unit
       VDS        Drain-source Voltage (VGS = 0)                                              600                           V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                             600                           V
       VGS        Gate- source Voltage                                                        

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