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                                                                               STS2DNE60
                                           DUAL N-CHANNEL 60V - 0.180 - 2A SO-8
                                                     STripFETTM POWER MOSFET

       TYPE          VDSS            RDS(on)            ID

    STS2DNE60         60 V           < 0.23             2A
s    TYPICAL RDS(on) = 0.180
s    LOW THRESHOLD GATE DRIVE
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY


                                                                             SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less                    INTERNAL SCHEMATIC DIAGRAM
critical alignment steps therefore a remarkable
manufacturing reproducibility.


APPLICATIONS
s DC MOTOR DRIVE

s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGEMENT IN PORTABLE/

  DESKTOP PCS




ABSOLUTE MAXIMUM RATINGS
     Symbol                                 Parameter                         Value          Unit
       VDS        Drain-source Voltage (VGS = 0)                               60                V
      VDGR        Drain-gate Voltage (RGS = 20 k)                              60                V
       VGS        Gate- source Voltage                                        

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