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                                                                                           STS2DPF20V
                                           DUAL P-CHANNEL 20V - 0.14 - 2A SO-8
                                        2.7V-DRIVE STripFETTM II POWER MOSFET
                                                                                                      PRELIMINARY DATA

       TYPE            VDSS              RDS(on)             ID

                                    <0.20 (@4.5V)
    STS2DPF20V          20 V                                 2A
                                    <0.25 (@2.7V)
s    TYPICAL RDS(on) = 0.14 (@4.5V)
s    TYPICAL RDS(on) = 0.2 (@2.7V)
s    ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
s    STANDARD OUTLINE FOR EASY                                                              SO-8
     AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-                              INTERNAL SCHEMATIC DIAGRAM
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.



APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGMENT IN CELLULAR PHONES




MOSFET ABSOLUTE MAXIMUM RATINGS
     Symbol                                      Parameter                                    Value                   Unit
       VDS        Drain-source Voltage (VGS = 0)                                                20                     V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                               20                     V
       VGS        Gate- source Voltage                                                         

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