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                                                                                         STS4DPF20L
                                             DUAL P-CHANNEL 20V - 0.07  - 4A SO-8
                                                      STripFETTM POWER MOSFET

        TYPE                VDSS         RDS(on)      ID

    STS4DPF20L              20 V        <0.08         4A
s    TYPICAL RDS(on) = 0.07 
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
s    LOW THRESHOLD DRIVE

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"                                           SO-8
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
                                                                INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

  PHONES




ABSOLUTE MAXIMUM RATINGS
     Symbol                                   Parameter                                   Value                    Unit
       VDS        Drain-source Voltage (VGS = 0)                                            20                       V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                           20                       V
       VGS        Gate- source Voltage                                                     

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