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                                                                                                              STS4DPF30L
                                               DUAL P-CHANNEL 30V - 0.07  - 4A SO-8
                                                        STripFETTM POWER MOSFET
                                                                                                                          PRELIMINARY DATA

            TYPE              VDSS          RDS(on)            ID

    STS4DPF30L                30 V         <0.08              4A
s    TYPICAL RDS(on) = 0.07 
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
s    LOW THRESHOLD DRIVE

DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"                                                               SO-8
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
                                                                              INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT
s POWER MANAGEMENT IN CELLULAR

  PHONES
s DC-DC CONVERTER




ABSOLUTE MAXIMUM RATINGS
    Symbol                                     Parameter                                                      Value                           Unit
      VDS       Drain-source Voltage (VGS = 0)                                                                  30                             V
     VDGR       Drain-gate Voltage (RGS = 20 k)                                                                 30                             V
      VGS       Gate- source Voltage                                                                           

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