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                                                                                           STS4PF20V
                                              P-CHANNEL 20V - 0.090  - 4A SO-8
                                        2.7V-DRIVE STripFETTM II POWER MOSFET

      TYPE          VDSS              RDS(on)        ID

                             < 0.11  ( @ 4.5 V )
    STS4PF20V       20 V                            4A
                             < 0.135  ( @ 2.7 V )
s    TYPICAL RDS(on) = 0.090  @ 4.5 V
s    TYPICAL RDS(on) = 0.100  @ 2.7 V
s    ULTRA LOW THRESHOLD
     GATE DRIVE (2.7 V)
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
                                                                                         SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and             INTERNAL SCHEMATIC DIAGRAM
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

APPLICATIONS
s MOBILE PHONE APPLICATIONS

s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

  EQUIPMENT




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                                 Value                              Unit
       VDS        Drain-source Voltage (VGS = 0)                                 20                                V
      VDGR        Drain-gate Voltage (RGS = 20 k)                                20                                V
       VGS        Gate- source Voltage                                          

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