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N-channel 150 V, 0.057 5 A, SO-8
,
STripFETTM DeepGATETM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STS5N15F4 150 V < 0.063 5A
N-channel enhancement mode
100% avalanched rated SO-8
Low gate charge
Very low on-resistance
Application
Figure 1. Internal schematic diagram
Switching applications
Description
This STripFETTM DeepGATETM Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
Table 1. Device summary
Order code Marking Package Packaging
STS5N15F4 5U15- SO-8 Tape and reel
August 2009 Doc ID 16083 Rev 2 1/11
www.st.com 11
Electrical ratings STS5N15F4
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 150 V
VGS Gate-source voltage
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