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sts5ns150


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                                                                                    STS5NS150
                             N-CHANNEL 150V - 0.075  - 5A SO-8
                  LOW GATE CHARGE STripFETTM II POWER MOSFET

        TYPE                VDSS         RDS(on)    ID

    STS5NS150              150 V         <0.1      5A
s    TYPICAL RDS(on) = 0.075 
s    EXTREMELY HIGH dv/dt CAPABILITY
s    100% AVALANCHE TESTED
s    APPLICATION ORIENTED
     CHARACTERIZATION

DESCRIPTION
This MOSFET series realized with STMicroelectronics                                SO-8
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
                                                             INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS

s UPS AND MOTOR CONTROL




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                          Value             Unit
       VDS        Drain-source Voltage (VGS = 0)                         150               V
      VDGR        Drain-gate Voltage (RGS = 20 k)                        150               V
       VGS        Gate- source Voltage                                  



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