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N-channel 20 V, 0.030 , 6 A SO-8
2.7 V drive STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) ID
< 0.040 (@4.5 V)
STS6NF20V 20 V 6A
< 0.045 (@2.7 V)
Ultra low threshold gate drive (2.5 V)
Standard outline for easy automated surface SO-8
mount assembly
Application
Switching applications
Figure 1. Schematic diagram
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1. Device summary
Order code Marking Package Packaging
STS6NF20V S6NF20V SO-8 Tape and reel
December 2009 Doc ID 7609 Rev 2 1/12
www.st.com 12
Contents STS6NF20V
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 7609 Rev 2
STS6NF20V Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 20 V
VGS Gate- source voltage
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