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                                                                             STS6DNF30V
                                        DUAL N-CHANNEL 30V - 0.026 - 6A SO-8
                                       2.5V-DRIVE STripFETTM II POWER MOSFET

       TYPE          VDSS              RDS(on)          ID

                                 <0.030 (@4.5V)
    STS6DNF30V        30 V                              6A
                                 <0.038 (@2.5V)
s    TYPICAL RDS(on) = 0.026 (@4.5V)
s    TYPICAL RDS(on) = 0.030 (@2.5V)
s    ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s    STANDARD OUTLINE FOR EASY
     AUTOMATED SURFACE MOUNT ASSEMBLY
                                                                             SO-8


DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size TM"
strip-based process. The resulting transistor shows                 INTERNAL SCHEMATIC DIAGRAM
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.


APPLICATIONS
s BATTERY SAFETY UNIT IN NOMADIC

  EQUIPMENT
s DC-DC CONVERTERS

s POWER MANAGEMENT IN PORTABLE/

  DESKTOP PCS




ABSOLUTE MAXIMUM RATINGS
     Symbol                                 Parameter                         Value          Unit
       VDS        Drain-source Voltage (VGS = 0)                               30                V
      VDGR        Drain-gate Voltage (RGS = 20 k)                              30                V
       VGS        Gate- source Voltage                                         

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