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STS8C5H30L
N-channel 30 V, 0.018 8 A, P-channel 30 V, 0.045 5 A SO-8
, ,
low gate charge STripFETTM III MOSFET
Features
RDS(on)
Type VDSS ID
max
STS8C5H30L(N-channel) 30 V < 0.022 8A
STS8C5H30L(P-channel) 30 V < 0.055 5A
Conduction losses reduced
Switching losses reduced
SO-8
Low threshold drive
Standard outline for easy automated surface
mount assembly
Application Figure 1. Internal schematic diagram
Switching applications
Description
The STS8C5H30L is a Power MOSFET realized
with the latest development of STMicroelectronics
unique "single feature size" strip-based process.
The resulting transistor shows extremely high
packing density for low on-resistance, rugged
avalanche characteristics and less critical
alignment steps therefore a remarkable
manufacturing reproducibility.
Table 1. Device summary
Part number Marking Package Packaging
STS8C5H30L S8C5H30L SO-8 Tape and reel
Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed
June 2010 Doc ID 10809 Rev 6 1/14
www.st.com 14
Contents STS8C5H30L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 10809 Rev 6
STS8C5H30L Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
N-channel P-channel
VDS Drain-source voltage (vgs = 0) 30 V
VGS Gate- source voltage ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo