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Dual n-channel 30 V - 0.018 - 8 A - SO-8
low gate charge STripFETTM III Power MOSFET
Features
Type VDSS RDS(on) max ID
STS8DNH3LL 30 V < 0.022 8A
Optimal RDS(on) x Qg trade-off @ 4.5 V
Conduction losses reduced
Switching losses reduced
Application
S0-8
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Switching applications
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Description
Figure 1.
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Internal schematic diagram
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This product utilizes the latest advanced design
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rules of ST's proprietary STripFETTM technology
which is suitable for the most demanding DC-DC
converter applications where high efficiency is
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Table 1. let Device summary
O bs Order code
STS8DNH3LL
Marking
8DH3LL
Package
SO-8
Packaging
Tape & reel
June 2008 Rev 2 1/12
www.st.com 12
Contents STS8DNH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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2/12
STS8DNH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vGS = 0) 30 V
VGS Gate- source voltage
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