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                                                                                STS9NF30L
                              N-CHANNEL 30V - 0.015  - 9A SO-8
                  LOW GATE CHARGE STripFETTM II POWER MOSFET

        TYPE                VDSS         RDS(on)    ID

    STS9NF30L               30 V        <0.020     9A
s    TYPICAL RDS(on) = 0.020  @ 5 V
s    TYPICAL Qg = 9.5 nC @ 4.5 V
s    OPTIMAL RDS(on) x Qg TRADE-OFF
s    CONDUCTION LOSSES REDUCED
s    SWITCHING LOSSES REDUCED

DESCRIPTION
This application specific Power MOSFET is the second                           SO-8
generation of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and          INTERNAL SCHEMATIC DIAGRAM
high efficiency are of paramount importance.

APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED

  FOR HIGH EFFICIENCY CPU CORE DC/DC
  CONVERTERS FOR MOBILE PCS




ABSOLUTE MAXIMUM RATINGS
     Symbol                          Parameter                         Value              Unit
       VDS        Drain-source Voltage (VGS = 0)                        30                 V
      VDGR        Drain-gate Voltage (RGS = 20 k)                       30                 V
       VGS        Gate- source Voltage                                  

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