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TIP34C
Complementary power transistors
Features
.
Low collector-emitter saturation voltage
Complementary NPN - PNP transistors
Applications
General purpose
3
2
1
Description
TO-247
The devices are manufactured in epitaxial-base
planar technology and are suitable for power
linear and switching applications. Figure 1. Internal schematic diagrams
Table 1. Device summary
Order code Marking Package Packaging
TIP33C TIP33C
TO-247 Tube
TIP34C TIP34C
February 2008 Rev 3 1/7
www.st.com 7
Electrical ratings TIP34C
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN TIP33C
PNP TIP34C
VCBO Collector-base voltage (IE = 0) 140 V
VCES Collector-emitter voltage (VBE = 0) 140 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 10 A
ICM Collector peak current (tP < 5 ms) 15 A
IB Base current 3 A
PTOT Total dissipation at Tcase = 25
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