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tip35


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                                                                         TIP35A/35B/35C
                                                                         TIP36A/36B/36C
                               COMPLEMENTARY SILICON HIGH POWER
                                                    TRANSISTORS

n   TIP35B, TIP35C, TIP36B, AND TIP36C ARE
    SGS-THOMSON PREFERRED
    SALESTYPES

DESCRIPTION
The TIP35A, TIP35B and TIP35C are silicon
epitaxial-base NPN transistors in TO-218 plastic
                                                                                                3
package. They are intented for use in power                                                2
amplifier and switching applications.                                                  1
The complementary PNP types are TIP36A,
TIP36B and TIP36C.                                                           TO-218




                                                               INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
    Symb ol                      Parameter                                  Valu e                   Unit
                                                         NPN   T IP35A     TIP35B          T IP35C
                                                         PNP   T IP36A     TIP36B          T IP36C
     V CBO    Collector-Base Voltage (I E = 0)                   60          80                100    V
     V CEO    Collector-Emitter Voltage (IB = 0)                 60          80                100    V
     V EBO    Emitter-Base Voltage (IC = 0)                                   5                       V
       IC     Collector Current                                              25                       A
      I CM    Collector Peak Current                                         50                       A
       IB     Base Current                                                    5                       A
                                                    o
      P tot   T otal Dissipation at Tc ase  25 C                             125                      W
                                                                                                     o
     T s tg   Storage T emperature                                        -65 to 150                     C
                                                                                                     o
       Tj     Max. Operating Junction T emperature                           150                         C
For PNP types voltage and current values are negative.


October 1995                                                                                                 1/4
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C

THERMAL DATA
                                                                                                               o
  R thj -ca se   Thermal Resistance Junction-case                                 Max             1                C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
  Symbo l              Parameter                            T est Con ditio ns          Min .   T yp.   Max.   Unit
      I CBO      Collector Cut-off            for TIP35A/36A
                 Current (I B = 0)            V CE = 30 V                                                1     mA
                                              for TIP35B/35C/36B/36C
                                              V CB = 60 V                                                1     mA
      I EBO      Emitter Cut- off Current     V EB = 5 V                                                 1     mA
                 (I C = 0)
      I CES      Collector Cut-off            V CE = Rated V CEO                                        0.7    mA
                 Current (V BE = 0)
 V CEO(sus) * Collector-Emitter               I C = 30 mA
              Sustaining Voltage              for T IP35A/36A                            60                        V
              (I B = 0)                       for T IP35B/36B                            80                        V
                                              for T IP35C/36C                           100                        V
      h FE*      DC Current Gain              I C = 1.5 A                V CE = 4 V      25
                                              I C = 15 A                 V CE = 4 V      10              50
  V CE(sat )*    Collector-Emitter            I C = 15 A                 IB = 1.5 A                     1.8        V
                 Saturation Voltage           I C = 25 A                 IB = 5 A                        4
  V BE(on) *     Base-Emitter Voltage         I C = 15 A                 V CE = 4 V                      2         V
                                              I C = 25 A                 V CE = 4 V                      4         V
       fT        Transition Frequency         IC = 1 A                   V CE = 10 V     3                     MHz
                                              f = 1 MHz
      h fe       Small Signal Current         IC = 1 A                   V CE = 10 V     25
                 Gain                         f = 1 KHz
 Pulsed: Pulse duration = 300 



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