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High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications 2
3
1
Electronic ballast for fluorescent lighting
TO-220
Electronic transformer for halogen lamps
Description
The device is manufactured using high voltage Figure 1. Internal schematic diagram
Multi Epitaxial Planar technology for high
switching speeds. It uses a cellular emitter
structure with planar edge termination to enhance
switching speeds while maintaining a satisfactory
RBSOA.
Table 1. Device summary
Oder code Marking Package Packaging
TR236 TR236 TO-220 Tube
February 2008 Rev 2 1/9
www.st.com 9
Electrical ratings TR236
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (V BE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
Emitter-base voltage
VEBO V(BR)EBO V
(IC = 0, IB = 2 A, tp < 10
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