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2N6520 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -350 V
Collector-Emitter Voltage VCEO -350 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Base Current IB -250 mA
& &
Collector Dissipation PC 0.625 W
Derate above 25 mW/
&
5
Junction Temperature TJ
&
50
Storage Temperature T STG -55 ~ 150
1.Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic Symbol Test Conditions Min Max Unit
Collector-Base Breakdown Voltage
%Collector-Emitter Breakdown Voltage
BVCBO }
IC= -100 , IE=0 -350 V
}
BVCEO IC= -1mA, IB=0 -350 V
Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V
Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0
%DC Current Gain IEBO
hFE VCE= -10V, IC= -1mA
-50 nA
20
VCE= -10V, IC= -10mA 30
VCE= -10V, IC= -30mA 30 200
VCE= -10V, IC= -50mA 20 200
VCE= -10V, IC= -100mA 15
Collector-Emitter Saturation Voltage VCE (sat) IC= -10mA, IB= -1mA -0.30 V
IC= -20mA, IB= -2mA -0.35 V
IC= -30mA, IB= -3mA -0.50 V
IC= -50mA, IB= -5mA -1 V
Base-Emitter Saturation Voltage VBE (sat) IC= -10mA, IB= -1mA -0.75 V
IC= -20mA, IB= -2mA -0.85 V
IC= -30mA, IB= -3mA -0.90 V
Base-Emitter On Voltage VCE= -10V, IC= -100mA
%Current Gain Bandwidth Product VBE (on)
VCE= -20V, IC= -10mA
-2 V
MHz
fT 40 200
Collector-Base Capacitance CCB VCB= -20V, IE=0, f=1MHz 6 pF
Emitter-Base Capacitance CEB VEB= -0.5V, IC=0, f=1MHz 100 pF
Turn On Time T ON VBE (off)= -2V, VCC= -100V 200 ns
IC= -50mA, IB1= -10mA
Turn Off Time T OFF VCC= -100V, IC= -50mA 3.5 ns
IB1=IB2=10mA
% Pulse Test: Pulse Width300s, Duty Cycle2%
2N6520 PNP EPITAXIAL SILICON TRANSISTOR
2N6520 PNP EPITAXIAL SILICON TRANSISTOR
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