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NPN EPITAXIAL
TIP100/101/102 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE=1000 @ VCE=4V, IC=3A TO-220
COLLECTOR-EMITTER SUSTAINING VOLTAGE
LOW COLLECTOR-EMITTER
SATURATION VOLTAGE
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUSTRIAL USE
Complementary to TIP105/106/107
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage : TIP100 VCBO 60 V 1.Base 2.Collector 3.Emitter
: TIP101 80 V
: TIP102 100 V
Collector Emitter Voltage
: TIP100 VCEO 60 V
: TIP101 80 V
: TIP102 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 8 A
Collector Current (Pulse) IC 15 A
Base Current (DC) IB 1 A
)
Collector Dissipation ( T A=5 PC 2 W
Collector Dissipation ( T =5) PC 80 W
C
Junction Temperature TJ 150
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (T C =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage VCEO(sus)
: TIP100 IC = 30mA, IB = 0 60 V
: TIP101 80 V
: TIP102 100 V
Collector Cutoff Current : TIP100 ICEO VCE = 30V, IB = 0 50 uA
: TIP101 VCE = 40V, IB = 0 50 uA
: TIP102 VCE = 50V, IB = 0 50 uA
Collector Cutoff Current : TIP100 ICBO VCE = 60V, IE = 0 50 uA
: TIP101 VCE = 80V, IE = 0 50 uA
: TIP102 VCE = 100V, IE = 0 50 uA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 2 mA
DC Current Gain hFE VCE = 4V, IC = 3A 1000 2000
VCE = 4V, IC = 8A 200
Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 6mA 2 V
IC = 8A, IB = 80mA 2.5 V
Base Emitter On Voltage VBE(on) VCE = 4V, IC = 8A 2.8 V
Output Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz 200 pF
NPN EPITAXIAL
TIP100/101/102 SILICON DARLINGTON TRANSISTOR
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