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PNP EPITAXIAL
TIP145F/146F/147F DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE = 1000 @ VCE = -4V, IC = -5A TO-3PF
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUSTRIAL USE
Complement to TIP140F/141F/142F
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector Emitter Voltage VCBO
: TIP145F V
- 60
: TIP146F V
- 80
: TIP147F V
- 100
Collector Emitter Voltage VCEO
V
: TIP145F - 60
V 1. Base 2. Collector 3. Emitter
: TIP146F - 80
V
: TIP147F - 100
Emitter-Base Voltage VEBO V
-5
Collector Current (DC) IC A
- 10
Collector Current (Pulse) IC A
- 15
Base Current (DC) IB A
Collector Dissipation ( T C=5 ) PC
- 0.5
60
W
Junction Temperature
Storage Temperature
TJ
T STG
150
- 65 ~ 150
ELECTRICAL CHARACTERISTICS (T C=25)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Emitter Sustaining Voltage VCEO(sus)
: TIP145F ~, I = 0
IC = - 30 B - 60 V
: TIP146F - 80 V
: TIP147F - 100 V
Collector Cutoff Current : TIP145F ICEO VCE = - 30V, IB = 0 -2 mA
: TIP146F VCE = - 40V, IB = 0 -2 mA
: TIP147F VCE = - 50V, IB = 0 -2 mA
Collector Cutoff Current : TIP145F ICBO VCB = - 60V, IE = 0 -1 mA
: TIP146F VCB = - 80V, IE = 0 -1 mA
: TIP147F VCB = - 100V, IE = 0 -1 mA
Emitter Cutoff Current IEBO VBE = - 5V, IC = 0 -2 mA
DC Current Gain hFE VCE = - 4V, IC = - 5A 1000
VCE = - 4V, IC = - 10A 500
Collector Emitter Saturation Voltage VCE(sat) IC = - 5A, IB = - 10mA -2 V
IC = - 10A, IB = - 40mA -3 V
Base Emitter Saturation Voltage VBE(sat) IC = - 10A, IB = - 40mA - 3.5 V
Base Emitter On Voltage VBE(on) VCE = - 4V, IC = - 10A -3 V
Delay Time tD VCC = - 30V, IC = - 5A 0.15 uS
Rise Time tR IB = - 20mA, IB1 = IB2 0.55 uS
Storage Time tSTG 2.5 uS
Fall Time tf 2.5 uS
PNP EPITAXIAL
TIP145F/146F/147F DARLINGTON TRANSISTOR
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