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BU407/407H                                               NPN EPITAXIAL SILICON TRANSISTOR


HIGH VOLTAGE SWITCHING                                                                       TO-220
USE IN HORIZONTAL DEFLECTION
OUTPUT STAGE


ABSOLUTE MAXIMUM RATINGS
           Characteristic               Symbol            Rating         Unit
 Collector-Base Voltage                 VCBO               330            V
 Collector-Emitter Voltage              VCEO               150            V
 Emitter-Base Voltage                   VEBO                  6           V
 Collector Current                      IC                    7           A                   1.Base 2.Collector 3.Emitter
 Collector Peck Current                 ICM                 10            A
 Base Current                           IB                    4           A
 Collector Dissipation ( T C=25  )      PC                  60            W
 Junction Temperature                   TJ                 150            
 Storage Temperature                    T STG            -65 ~ 150        
ELECTRICAL CHARACTERISTICS (Tc =25)
            Characteristic                      Symbol               Test Conditions                  Min     Max       Unit
 Collector Cutoff Current (VBE=0)            ICES           VCE = 330V, VBE = 0                                  5      mA
                                                            VCE = 200V, VBE = 0                                100       uA
                                                                                         
                                                            VCE = 200V, VBE = 0, T C = 150                       1      mA
 Emitter Cutoff Current (IC=0)               IEBO           VBE = 6V, IC = 0                                     1      mA
 Collector Emitter Saturation Voltage
                          : BU407            VCE(sat)       IC = 5A, IB = 0.5A                                   1       V
                          : BU407H                          IC = 5A, IB = 0.8A                                   1       V
 Base Emitter Saturation Voltage
                          : BU407            VBE(sat)       IC = 5A, IB = 0.5A                                 1.2       V
                          : BU407H                          IC = 5A, IB = 0.8A                                 1.2       V
 Current Gain- Bandwidth Product             fT             VCE = 10V, IC = 0.5A                      10                MHz
 Turn-off Time            : BU407            toff           IC = 5A, IB = 0.5A                                0.75       uS
                          : BU407H                          IC = 5A, IB = 0.8A                                 0.4       uS
BU407/407H   NPN EPITAXIAL SILICON TRANSISTOR

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