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KSC5039                                                                     NPN SILICON TRANSISTOR

HIGH VOLTAGE POWER SWITCH
                                                                                 TO-220
SWITCHING APPLICATION

ABSOLUTE MAXIMUM RATINGS
                Characteristic             Symbol      Rating        Unit
    Collector-Base Voltage                 VCBO         800           V
    Collector-Emitter Voltage              VCEO         400           V
    Emitter-Base Voltage                   VEBO            7          V
    Collector Current (DC)                 IC              5          A
    Collector Current (Pulse)              IC             10          A
    Base Current                           IB              3          A
                                 )
    Collector Dissipation ( T C=25         PC             70          W
    Junction Temperature                   TJ           150                       1.Base 2.Collector 3.Emitter

    Storage Temperature                    T STG      -65 ~ 150       
ELECTRICAL CHARACTERISTICS (T C =25)
                Characteristic              Symbol             Test Conditions         Min     Typ    Max        Unit
    Collector-Base Breakdown Voltage       BVCBO        IC = 1mA, IE = 0               800                        V
    Collector-Emitter Breakdown Voltage    BVCEO        IC = 5mA, IB = 0               400                        V
    Emitter-Base Breakdown Voltage         BVEBO        IC = 1mA, IC=0                    7
    Collector Cutoff Current               ICBO         VCB = 500V, IE = 0                             10        uA
    Emitter Cutoff Current                 IEBO         VEB = 7V, IC = 0                               10        uA
%DC Current Gain                           hFE          VCE = 5V, IC = 0.3A               10
%Collector Emitter Saturation Voltage      VCE(sat)     IC = 2.5A, IB = 0.5A                          1.5         V
%Base Emitter Saturation Voltage           VBE(sat)     IC = 2.5A, IB = 0.5A                          2.0         V
    Current Gain Bandwidth Product         fT           VCE = 5V, IC = 0.1A                    10                MHz
    Output Capacitance                     COB          VCB = 10V , f = 1MHz                   40                pF
    Turn On Time                           tON          IB1 = -IB2 = 0.5A                               1        us
    Storage Time                           tSTG         IC = 2.5A                                       3        us
    Fall Time                              tF           VCC =150V                                     0.8        us
%    Plus test : PW=300  I, Duty Cycle=2% Pulsed
KSC5039   NPN SILICON TRANSISTOR
KSC5039   NPN SILICON TRANSISTOR

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