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ksc5039f


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KSC5039F                                                       NPN PLANAR SILICON TRANSISTOR

HIGH VOLTAGE POWER SWITCH
SWITCHING APPLICATION                                                                   TO-220F




ABSOLUTE MAXIMUM RATINGS
                Characteristic             Symbol             Rating         Unit
    Collector-Base Voltage                 VCBO                800            V
    Collector-Emitter Voltage              V CEO               400            V
    Emitter-Base Voltage                   VEBO                  7            V
    Collector Current (DC)                 IC                    5            A
    Collector Current (Pulse)              IC                   10            A
    Base Current                           IB                    3            A
    Collector Dissipation (T C=25)         PC                   30           W
    Junction Temperature                   TJ                  150           
    Storage Temperature                    T STG           -65 ~ 150                       1 . Base 2. Collector 3. Emitter




ELECTRICAL CHARACTERISTICS (Tc=25)
                Characteristic                       Symbol            Test Condition        Min       Typ       Max          Unit
    Collector- Base Breakdown Voltage           BVCBO            IC = 1mA, IE = 0            800                               V
    Collector- Emitter Breakdown Voltage        BVCEO            IC = 5mA, IB = 0            400                               V
    Emitter- Base Breakdown Voltage             BVEBO            IC = 1mA, IC = 0               7
    Collector Cutoff Current                    ICBO             VCB = 500V, IE = 0                                10         uA
    Emitter Cutoff Current                      IEBO             VEB = 7V, IC = 0                                  10         uA
%DC Current Gain                                hFE              VCE = 5V, IC = 0.3A          10
%Collector Emitter Saturation Voltage           VCE(sat)         IC = 2.5A, IB = 0.5A                             1.5          V
%Base Emitter Saturation Voltage                VBE(sat)         IC = 2.5A, IB = 0.5A                             2.0          V
    Current Gain Bandwidth Product               fT              VCE = 5V, IC = 0.1A                    10                    MHz
    Output Capacitance                          COB              VCB = 10V , f = 1MHz                   40                    pF
    Turn On Time                                tON              IB1 = -IB2 = 0.5A                                  1         uS
    Storage Time                                tSTG             IC = 2.5A                                          3         uS
    Fall Time                                   tF               VCC=150V                                         0.8         uS
%   Plus test : PW=300   I, Duty Cycle=2% Pulsed
KSC5039F   NPN SILICON TRANSISTOR
KSC5039F   NPN SILICON TRANSISTOR



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