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KSD5018                                      NPN SILICON DARLINGTON TRANSISTOR

HIGH VOLTAGE POWER DARLINGTON TR
                                                                                      TO-220
BUILT-IN RESISTOR BETWEEN BASE AND
EMITTER FOR MOTOR DRIVE


ABSOLUTE MAXIMUM RATINGS
            Characteristic              Symbol           Rating         Unit
 Collector Base Voltage                 VCBO              600            V
 Collector Emitter Voltage              VCEO              275            V
 Emitter Base Voltage                   VEBO               10            V
 Collector Current (DC)                 IC                   4           A
*Collector Current (Pulse)              IC                   6           A
                                                                                       1.Base 2.Collector 3.Emitter
 Base Current (DC)                      IB                 0.5           A
 Collector Dissipation ( T C=25)        PC                 40            W
 Junction Temperature                   TJ                150            
 Storage Temperature                    T STG           -55 ~ 150        
ELECTRICAL CHARACTERISTICS (Tc =25)
              Characteristic                    Symbol                    Test Conditions            Min   Max        Unit
 Collector Emitter Sustaining Voltage        VCEO (sus)          IC = 1.5A, IB = 0.05A, L = 25mH     275               V
 Collector Emitter Voltage                   VCER                IC = 1mA, RBE = 330  

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