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NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 {
IC= -1.5 and -2.0A DC TO-126
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE-EMITTER RESISTORS
Complement to KSE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage VCBO
: KSE800/801 60 V
: KSE802/803 80 V
Collector-Emitter Voltage VCEO
: KSE800/801 60 V
: KSE802/803 80 V
Emitter- Base Voltage VEBO 5 V 1. Emitter 2. Collector 3. Base
Collector Current IC 4 A
Base Current IB 0.1 A
)
Collector Dissipation (T c=25 PC 40 W
Junction Temperature TJ 150
Storage Temperature T STG -55 ~ 150
ELECTRICAL CHARACTERISTICS )
(T C=25
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Breakdown Voltage BVCEO IC = 50mA, IB = 0
: KSE800/801 60 V
: KSE802/803 80 V
Collector Cutoff Current ICEO
: KSE800/801 VCE = 60V, IB = 0 100 uA
: KSE802/803 VCE = 80V, IB = 0 100 uA
Collector Cutoff Current ICBO VCB = Rated BVCEO, IE = 0 100 uA
VCB = Rated BVCEO, IE = 0 500 uA
T C = 100
Emitter Cutoff Current IEBO VBE = 5V, Ic = 0 2 mA
DC Current Gain : KSE800/802 hFE VCE = 3V, IC = 1.5A 750
: KSE801/803 VCE = 3V, IC = 2A 750
: ALL DEVICES VCE = 3V, IC = 4A 100
Collector-Emitter Saturation Voltage VCE(sat)
: KSE800/802 IC = 1.5A, IB = 30mA 2.5 V
: KSE801/803 IC = 2A, IB = 40mA 2.8 V
: ALL DEVICES IC = 4A, IB = 40mA 3 V
Base-Emitter On Voltage VBE(on)
: KSE800/802 VCE = 3V, IC = 1.5A 1.2 V
: KSE801/803 VCE = 3V, IC = 2A 2.5 V
: ALL DEVICES VCE = 3V, IC = 4A 3 V
NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
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