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KSE170/171/172                                              PNP EPITAXIAL SILICON TRANSISTOR

LOW POWER AUDIO AMPLIFIER
                                                                                             TO-126
LOW CURRENT, HIGH SPEED
SWITCHING APPLICATIONS

ABSOLUTE MAXIMUM RATINGS
           Characteristic                  Symbol           Rating        Unit
 Collector-Base Voltage : KSE170           VCBO               -60           V
                            : KSE171                          -80           V
                            : KSE172                         -100           V
 Collector-Emitter Voltage
                            : KSE170       VCEO               -40           V
                            : KSE171                          -60           V
                            : KSE172                          -80           V
 Emitter-Base Voltage                      VEBO                -7           V
 Collector Current (DC)                    IC                  -3           A                    1. Emitter 2. Collector 3. Base
 Collector Current (Pulse)                 IC                  -6           A
 Base Current (DC)                         IB                  -1           A
                              )
 Collector Dissiapation (T A=25             PC                1.5          W
 Collector Dissipation ( T =25)             PC               12.5          W
                                                                           
                            C

 Junction Temperature                      TJ                150
 Storage Temperature                       T STG           -65 ~ 150       
ELECTRICAL CHARACTERISTICS (Tc=25)
            Characteristic                       Symbol                   Test Conditions                   Min       Max          Unit
 Collector Emitter Sustaining Voltage
                                : KSE170        VCEO(sus)     IC = 10mA, IB = 0                             -40                     V
                                : KSE171                                                                    -60                     V
                                : KSE172                                                                    -80                     V
 Collector Cutoff Current       : KSE170        ICBO          VCB = - 60V, IB = 0                                     -0.1         uA
                                : KSE171                      VCB = - 80V, IE = 0                                     -0.1         uA
                                : KSE172                      VCB = - 100V, IE = 0                                    -0.1         uA
                                : KSE170                                                   
                                                              VCB = - 60V, IE = 0, T C = 150                          -0.1         mA
                                : KSE171                      VCB   = - 80V, I = 0, T = 150                           -0.1         mA
                                                                    = - 100V, I = 0, T = 150
                                                                            E        C

                                : KSE172                      VCB               E        C                            -0.1         mA
 Emitter Cutoff Current                         IEBO          VBE = - 7V, IC = 0                                      -0.1         uA
 DC Current Gain                                hFE           VCE = - 1V, IC = - 100mA                       50       250
                                                              VCE = - 1V, IC = - 500mA                       30
                                                              VCE = - 1V, IC = - 1.5A                        12
 Collector Emitter Saturation Voltage           VCE(sat)      IC = - 500mA, IB = - 50mA                               -0.3          V
                                                              IC = - 1.5A, IB = - 150mA                               -0.9          V
                                                              IC = - 3A, IB = - 600mA                                 -1.7          V
 Base-Emitter Saturation Voltage                VBE(sat)      IC = - 1.5A, IB = - 150mA                               -1.5          V
                                                              IC = - 3A, IB = - 600mA                                 -2.0          V
 Base Emitter On Voltage                        VBE(on)       VCE = - 1V, IC = - 500mA                                -1.2          V
 Current Gain-Bandwidth Product                 fT            VCE = - 10V, IC = - 100mA, f = 10MHz           50                MHz
 Output Capacitance                             COB           VCB = - 10V, IE = 0, f = 0.1MHz                          50          pF
KSE170/171/172   PNP EPITAXIAL SILICON TRANSISTOR
KSE170/171/172   PNP EPITAXIAL SILICON TRANSISTOR

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