Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors Samsung kse180

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.



Image preview - the first page of the document



>> Download kse180 documenatation <<

Text preview - extract from the document

KSE180/181/182                                              NPN EPITAXIAL SILICON TRANSISTOR

DESIGNED FOR LOW POWER AUDIO
                                                                                             TO-126
AMPLIFIER AND LOW CURRENT
HIGH SPEED SWITCHING APPLICATIONS

ABSOLUTE MAXIMUM RATINGS
           Characteristic                  Symbol           Rating        Unit
 Collector-Base Voltage : KSE180           VCBO                60             V
                            : KSE181                           80             V
                            : KSE182                          100             V
 Collector-Emitter Voltage                 VCEO
                            : KSE180                          40              V
                            : KSE181                          60              V
                            : KSE182                          80              V
 Emitter-Base Voltage                      VEBO                7              V
 Collector Current (DC)                    IC                  3              A                  1. Emitter 2. Collector 3. Base
 Collector Current (Pulse)                 IC                  6              A
 Base Current (DC)                         IB                  1              A
                              )
 Collector Dissiapation (T A=25            PC                 1.5             W
 Collector Dissipation ( T =25)            PC                12.5             W
                                                                              
                            C

 Junction Temperature                      TJ                150
 Storage Temperature                       T STG           -65 ~ 150          
ELECTRICAL CHARACTERISTICS (Tc=25)
            Characteristic                       Symbol                  Test Conditions                   Min       Max       Unit
 Collector Emitter Sustaining Voltage
                                : KSE180   VCEO(sus)          IC = 10mA, IB = 0                             40                     V
                                : KSE181                                                                    60                     V
                                : KSE182                                                                    80                     V
 Collector Cutoff Current       : KSE180        ICBO          VCB = 60V, IB = 0                                       0.1          uA
                                : KSE181                      VCB = 80V, IE = 0                                       0.1          uA
                                : KSE182                      VCB = 100V, IE = 0                                      0.1          uA
                                : KSE180                                                 
                                                              VCB = 60V, IE = 0, T C = 150                            0.1          mA
                                : KSE181                      VCB   = 80V, I = 0, T = 150                             0.1          mA
                                                                    = 100V, I = 0, T = 150
                                                                          E         C

                                : KSE182                      VCB             E         C                             0.1          mA
 Emitter Cutoff Current                         IEBO          VBE = 7V, IC = 0                                        0.1          uA
 DC Current Gain                                hFE           VCE = 1V, IC = 100mA                          50        250
                                                              VCE = 1V, IC = 500mA                          30
                                                              VCE = 1V, IC = 1.5A                           12
 Collector Emitter Saturation Voltage           VCE(sat)      IC = 500mA, IB = 50mA                                   0.3          V
                                                              IC = 1.5A, IB = 150mA                                   0.9          V
                                                              IC = 3A, IB = 600mA                                     1.7          V
 Base-Emitter Saturation Voltage                VBE(sat)      IC = 1.5A, IB = 150mA                                   1.5          V
                                                              IC = 3A, IB = 600mA                                     2.0          V
 Base Emitter On Voltage                        VBE(on)       VCE = 1V, IC = 500mA                                    1.2          V
 Current Gain-Bandwidth Product                 fT            VCE = 10V, IC = 100mA, f = 10MHz              50                 MHz
 Output Capacitance                             COB           VCB = 10V, IE = 0, f = 0.1MHz                           30           pF
KSE180/181/182   NPN EPITAXIAL SILICON TRANSISTOR
KSE180/181/182   NPN EPITAXIAL SILICON TRANSISTOR

◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo