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kse340


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KSE340                                               NPN EPITAXIAL SILICON TRANSISTOR

HIGH COLLECTOR-EMITTER
SUSTAINING VOLTAGE                                                                      TO-126
HIGH VOLTAGE GENERAL PURPOSE
APPLICATIONS
SUITABLE FOR TRANSFORMER
Complement to KSE350


ABSOLUTE MAXIMUM RATINGS
          Characteristic                Symbol       Rating          Unit
 Collector- Base Voltage                VCBO           300            V
 Collector-Emitter Voltage              VCEO           300            V
 Emitter- Base Voltage                  VEBO                5         V
 Collector Current                      IC             500           mA
                             )
 Collector Dissipation (T c=25          PC                 20        W
 Junction Temperature                   TJ             150           
 Storage Temperature                    T STG       -65 ~ 150                                   1. Emitter 2. Collector 3. Base




ELECTRICAL CHARACTERISTICS                       (T C=25)
                 Characteristic                             Symbol                 Test Condition               Min    Max    Unit
 Collector Emitter Sustaining Voltage                VCEO(sus)              IC = 1mA, IB = 0                    300               V
 Collector Cutoff Current                            ICBO                   VCB = 300V, IE =0                          100        uA
 Emitter Cutoff Current                              IEBO                   VBE = 3V, IC = 0                           100        uA
 DC Current Gain                                     hFE                    VCE = 10V, IC = 50mA                30     240
KSE340   NPN EPITAXIAL SILICON TRANSISTOR



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