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KSE350                                                    PNP EPITAXIAL SILICON TRANSISTOR

HIGH COLLECTOR-EMITTER
SUSTAINING VOLTAGE                                                                        TO-126
HIGH VOLTAGE GENERAL PURPOSE
APPLICATIONS
SUITABLE FOR TRANSFORMER
Complement to KSE340


ABSOLUTE MAXIMUM RATINGS
          Characteristic                Symbol          Rating         Unit
 Collector- Base Voltage                VCBO             -300           V
 Collector-Emitter Voltage              VCEO             -300           V
 Emitter- Base Voltage                  VEBO                -5          V
 Collector Current                      IC               -500          mA
                             )
 Collector Dissipation (T c=25          PC                20            W
 Junction Temperature                   TJ               150             
 Storage Temperature                    T STG          -65 ~ 150                              1. Emitter 2. Collector 3. Base




ELECTRICAL CHARACTERISTICS                        (T C=25  )
              Characteristic                      Symbol                    Test Condition            Min       Max        Unit
 Collector Emitter Sustaining Voltage           VCEO(sus)          IC = - 1mA, IB = 0                 -300                      V
 Collector Cutoff Current                       ICBO               VCB = - 300V, IE = 0                         -100        uA
 Emitter Cutoff Current                         IEBO               VBE = - 3V, Ic = 0                           -100        uA
 DC Current Gain                                hFE                VCE = - 10V, IC = - 50mA             30       240
KSE350   PNP EPITAXIAL SILICON TRANSISTOR

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