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KSH30/30C PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLICATIONS D-PAK
D-PACK FOR SURFACE MOUNT
APPLICATIONS
Load Formed for Surface Mount Application(No Suffix)
Straight Lead (I.ACK, "- I
Suffix) 1
Electrically Similar to Popular TIP30 and TIP30C
1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
I-PAK
Collector Base Voltage : KSH30 VCBO - 40 V
: KSH30C - 100 V
Collector Emitter Voltage : KSH30 VCEO - 40 V
: KSH30C - 100 V
Emitter Base Voltage VEBO -5 V 1
Collector Current (DC) IC -3 A
Collector Current (Pulse) IC -1 A 1. Base 2. Collector 3. Emitter
Base Current IB -1 A
Collector Dissipation ( T C=25 &) PC - 15 W
Collector Dissipation (T A=25 &) PC - 1.56 W
Junction Temperature TJ - 150 &
Storage Temperature T STG -65 ~ 150 &
ELECTRICAL CHARACTERISTICS (Tc =25&)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage : KSH30 VCEO (sus) IC = - 30mA, IB = 0 - 40 V
: KSH30C - 100 V
Collector Cutoff Current : KSH30 ICEO VCE = - 40V, IB = 0 - 50 uA
: KSH30C VCE = - 60V, IB = 0 - 50 uA
Collector Cutoff Current : KSH30 ICES VCE = - 40V, VBE = 0 - 20 uA
: KSH30C VCE = 100V, VBE = 0 - 20 uA
Emitter Cutoff Current IEBO VBE = - 5V, IC = 0 -1 mA
* DC Current Gain hFE VCE = - 4V, IC = - 0.2A 25
VCE = - 4V, IC = - 1A 10 70
* Collector Emitter Saturation Voltage VCE(sat) IC = - 1A, IB = - 125mA - 0.7 V
* Base Emitter On Voltage VBE(on) VCE = - 4A, IC = - 1A - 1.3 V
Current Gain Bandwidth Product fT VCE = - 10V, IC = - 200mA 3 MHz
f = 1MHz
% Pulse Test : PW 300uS, Duty Cycle2%
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