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KSP5179                                                NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY TRANSISTOR
                                                                                   TO-92


ABSOLUTE MAXIMUM RATINGS (TA=25                             )
         Characteristic                Symbol           Rating          Unit

Collector-Base Voltage             VCBO                   20             V
Collector-Emitter Voltage          VCEO                   12             V
Emitter-Base Voltage               VEBO                  2.5             V

                            
Collector Current                  IC                     50            mA
                                   PC                    200            mW
                                                                            
Collector Dissipation (T A=25 )
  Derate above 25                                        1.14          mW/
                            
Collector Dissipation (T C=25 )                                         mW
                                                                            
                                   PC                    300
  Derate above 25                                                      mW/
                                                                         
                                                         1.71
Junction Temperature
Storage Temperature
                                   TJ
                                   T STG
                                                         150
                                                       -55~150           

                                                                                         1. Emitter 2. Base 3. Collector


ELECTRICAL CHARACTERISTICS (TA=25                            )
             Characteristic                      Symbol              Test Conditions            Min         Max            Unit

Collector-Emitter Sustaining Voltage            VCEO (sus)      IC=3mA, IB=0                      12                        V
Collector-Base Breakdown Voltage                BVCBO           IC=0.001mA, IE=0                  20                        V

                                                                                                                           }
Emitter-Base Breakdown Voltage                  BVEBO           IE=0.01, IC=0                     2.5                       V

                                                                                                                           }
Collector Cut-off Current                       ICBO            VCB=15V, IE=0                               0.02
                                                                VCB=15V, IE=0, Ta=150                          1
DC Current Gain                                 hFE             VCB=1V, IC=3mA                    25         250
Collector-Emitter Saturation Voltage            VCE (sat)       IC=10mA, IB=1mA                              0.4            V
Base-Emitter Saturation Voltage                 VBE (sat)       IC=10mA, IB=1mA                                1            V
Current Gain Bandwidth Product                  fT              VCE=6V, IC=5mA                   900        2000           MHz
Collector-Base Capacitance                      CCB             VCB=10V, IE=0, f=0.1 to MHz                    1            pF
Small Signal Current Gain                       hFE             VCE=6V, IC=2mA, f=1KHz                       300
                                                   

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