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KST10/11                                               NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSITOR
                                                                                    TO-92


ABSOLUTE MAXIMUM RATINGS (TA=25                         )
              Characteristic                 Symbol         Rating     Unit

 Collector-Base Voltage                     VCBO            30          V
 Collector-Emitter Voltage                  VCEO            25          V

                               &
 Emitter-Base Voltage                       VEBO           3.0          V
                                            PC             350         mW
                                                                          &
 Collector Dissipation (Ta=25 )
   Derate above 25&                                                   mW/
                               &
                                                           2.8
 Collector Dissipation (Ta=25 )
                  &
                                                                       W
                                                                         &
                                            PC             1.0
   Derate above 25                                                    W/
 Junction Temperature
                                                           8.0
                                                                        &
 Storage Temperature                        TJ             150
                                                                        &
 Thermal Resistance, Junction to Case
                                            T STG        -55~150
                                                                       &/W
 Thermal Resistance, Junction to Ambient
                                            Rth(j-c)
                                            Rth(j-a)
                                                           125
                                                           357         &/W
                                                                                         1. Emitter 2. Base 3. Collector



ELECTRICAL CHARACTERISTICS (TA=25                       )
              Characteristic                  Symbol             Test Conditions             Min         Max         Unit

 Collector-Baser Breakdown Voltage          BVCBO                }
                                                            IC=100 , IE=0                      30                     V

                                                                }
 Collector-Emitter Breakdown Voltage        BVCEO           IC=1mA, IB=0                       25                     V
 Emitter-Base Breakdown Voltage             BVEBO           IE=10 , IC=0                       3.0                    V
 Collector Cut-off Current                  ICBO            VCB=25V, IE=0                                 100         nA
 Emitter Cut-off Current                    IEBO            VEB=2V, IC=0                                  100         nA
 DC Current Gain                            hFE             VCE=10V, IC=4mA                     60
 Collector-Emitter Saturation Voltage       VCE (sat)       IC=4mA, IB=0.4mA                               0.5        V
 Base-Emitter On Voltage                    VBE (sat)       VCE=10V, IC=4mA                               0.95        V
 Current Gain Bandwidth Product             CCB             VCE=10V, IC=4mA                   650                    MHz
 Collector Base Capacitance                 CRB             VCB=10V, IE=0, f=1MHz                          0.7        pF
                                                            VCB=10V, IE=0, f=1MHz
                                                  

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